The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2008

Filed:

Feb. 01, 2005
Applicants:

Tadaaki Mimura, Katano, JP;

Tsuyoshi Hamatani, Otsu, JP;

Atuhito Mizutani, Uji, JP;

Kenji Ueda, Yamatokooriyama, JP;

Inventors:

Tadaaki Mimura, Katano, JP;

Tsuyoshi Hamatani, Otsu, JP;

Atuhito Mizutani, Uji, JP;

Kenji Ueda, Yamatokooriyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 27/10 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pad section serving as an electrode for external connection of a semiconductor device includes a first pad metal () formed in the top layer, a second pad metal () formed under the first pad metal () via an interlayer insulating film (), and vias () which penetrate the interlayer insulating film () and electrically connect the first pad metal () and the second pad metal (). The first pad metal () and the second pad metal () have edges displaced from each other so as not to be aligned with each other along the thickness direction of each layer. Thus, it is possible to reduce stress occurring on an edge of the second pad metal (), thereby reducing damage on the interlayer insulating film () and so on.


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