The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Aug. 18, 2005
Applicant:
Klaus Hummler, Apex, NC (US);
Inventor:
Klaus Hummler, Apex, NC (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor wafer has a dielectric layer, a metal last layer, a passivation layer, and a redistribution layer. The metal last layer is formed over the dielectric layer, and the metal last layer has first and second locations that are spaced apart from each other. The passivation layer is formed over the metal last layer. The redistribution layer is formed over the passivation layer. The redistribution layer has a signal routing wire coupled to the first location of the metal last layer and to the second location of the metal last layer.