The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Nov. 09, 2004
Kenichi Tokano, Kawasaki, JP;
Atsuko Yamashita, Yokosuka, JP;
Koichi Takahashi, Kitakyushu, JP;
Hideki Okumura, Yokohama, JP;
Shingo Sato, Kawasaki, JP;
Kenichi Tokano, Kawasaki, JP;
Atsuko Yamashita, Yokosuka, JP;
Koichi Takahashi, Kitakyushu, JP;
Hideki Okumura, Yokohama, JP;
Shingo Sato, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Provided is a semiconductor device including a semiconductor substrate which includes a first semiconductor layer of a first conductivity and a pair of second semiconductor layers disposed on the first semiconductor layer and spaced apart from each other to form a trench therebetween, wherein the second semiconductor layer includes a first impurity-diffused region of the first conductivity extending from a lower surface toward an upper surface of the second semiconductor layer, and a second impurity-diffused region of a second conductivity which extends from the lower surface toward the upper surface and is adjacent to the first impurity-diffused region, an insulating layer covering a sidewall of the trench, and a cap layer which is in contact with the semiconductor substrate and covers an opening of the trench to form an enclosed space in the trench, a material of the cap layer being almost the same as that of the semiconductor substrate.