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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7391057 B1

PDFFull Text
Date of Patent:
Jun. 24, 2008

Filed:

May. 18, 2005

High voltage silicon carbide devices having bi-directional blocking capabilities

Applicants:

Sei-hyung Ryu, Cary, NC (US);

Jason R. Jenny, Wake Forest, NC (US);

Mrinal K. Das, Durham, NC (US);

Hudson Mcdonald Hobgood, Pittsboro, NC (US);

Anant K. Agarwal, Chapel Hill, NC (US);

John W. Palmour, Cary, NC (US);

Inventors:

Sei-Hyung Ryu, Cary, NC (US);

Jason R. Jenny, Wake Forest, NC (US);

Mrinal K. Das, Durham, NC (US);

Hudson McDonald Hobgood, Pittsboro, NC (US);

Anant K. Agarwal, Chapel Hill, NC (US);

John W. Palmour, Cary, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:

Myers Bigel Sibley & Sajovec PA

Primary Examiner:

Hoai V Pham

Int. Cl.
CPC ...
H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
Abstract

High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.

Find Patent Forward Citations

Ryu, Sei-Hyung. (2008). High voltage silicon carbide devices having bi-directional blocking capabilities (U.S. Patent No. 7391057). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7391057

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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