The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Nov. 15, 2005
Seong-oh Woo, Pleasanton, CA (US);
Jun Tae Choi, Suwon, KR;
Seong-Oh Woo, Pleasanton, CA (US);
Jun Tae Choi, Suwon, KR;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention relates to fluorinated silicate glass (FSG) with low dielectric constant and improved gap-fill characteristics. In the present method, a fluorinated silicon source, an optional fluorine source, an optional carbon source, a hydrogen source, and an oxygenator are used as the reactant gases. Inert or carrier gas(es) may also be used. In accordance with the present invention, the reactant gas mixture does not comprise a silane compound having the general formula SiH, wherein x has a range of 1 to 2, y has a range of 4 to 6. The material deposited is thus referred to herein alternatively as 'SiF-only FSG' or 'SiF-only fluorinated oxide' (“SOFO”).