The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Jul. 25, 2005
Woon Suh Paik, Sangnok-gu, Ansan-si, Gyeonggi-do, KR;
Woon Suh Paik, Sangnok-gu, Ansan-si, Gyeonggi-do, KR;
Other;
Abstract
A method for crystallizing an amorphous semiconductor thin film using a non-metal seed epitaxial growth (NSEG) is provided. The method includes the steps of: forming a pair of non-metal seeds for inducing a crystallization of an amorphous semiconductor thin film at a predetermined distance on a transparent insulation substrate; depositing the amorphous semiconductor thin film on the insulation substrate; and heat-treating the insulation substrate to thereby epitaxially grow a poly-crystalline semiconductor thin film from the non-metal seeds, and to thus crystallize the amorphous semiconductor thin film. In the crystallization method, non-metal seeds are used instead of using crystallization induced metal to thereby epitaxially grow the poly-crystalline semiconductor thin film and to thus realize the amorphous semiconductor thin film without having metal pollution.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile