The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Feb. 22, 2005
Hagen Klauk, Erlangen, DE;
Marcus Halik, Erlangen, DE;
Ute Zschieschang, Erlangen, DE;
Guenter Schmid, Hemhofen, DE;
Stefan Braun, Willich, DE;
Hagen Klauk, Erlangen, DE;
Marcus Halik, Erlangen, DE;
Ute Zschieschang, Erlangen, DE;
Guenter Schmid, Hemhofen, DE;
Stefan Braun, Willich, DE;
Infineon Technologies, AG, Neubiberg, DE;
Abstract
A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.