The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2008

Filed:

Mar. 28, 2006
Applicants:

Kiichi Meguro, Itami, JP;

Keisuke Tanizaki, Itami, JP;

Akihiko Namba, Itami, JP;

Yoshiyuki Yamamoto, Itami, JP;

Takahiro Imai, Itami, JP;

Inventors:

Kiichi Meguro, Itami, JP;

Keisuke Tanizaki, Itami, JP;

Akihiko Namba, Itami, JP;

Yoshiyuki Yamamoto, Itami, JP;

Takahiro Imai, Itami, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, back-feed devices, and others. The manufacturing method of the present invention includes: preparing a substrate having a main face including a first region which is a concave and a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and polishing to substantially flatten both the CVD diamond layers and on the second region by mechanically polishing.


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