The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Jun. 26, 2007
Changhe Shang, Fremont, CA (US);
Yun-fei LI, Fremont, CA (US);
Yining HU, Fremont, CA (US);
Yong Shen, Saratoga, CA (US);
Changhe Shang, Fremont, CA (US);
Yun-Fei Li, Fremont, CA (US);
Yining Hu, Fremont, CA (US);
Yong Shen, Saratoga, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A method to fabricate a tunneling magnetoresistive (TMR) read transducer is disclosed. An insulative layer is deposited on a wafer substrate, and a bottom lead is deposited over the insulative layer. A laminated TMR layer, having a plurality of laminates, is deposited over the bottom lead. A TMR sensor having a stripe height is defined in the TMR layer, and a parallel resistor and first and second shunt resistors are also defined in the TMR layer. A top lead is deposited over the TMR sensor. The parallel resistor is electrically connected to the bottom lead and to the top lead. The first shunt resistor is electrically connected to the bottom lead and the wafer substrate, and the second shunt resistor is electrically connected to the top lead and the wafer substrate.