The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Sep. 09, 2005
Toshimasa Namekawa, Tokyo, JP;
Hiroaki Nakano, Yokohama, JP;
Hiroshi Ito, Yokohama, JP;
Atsushi Nakayama, Kawasaki, JP;
Osamu Wada, Yokohama, JP;
Toshimasa Namekawa, Tokyo, JP;
Hiroaki Nakano, Yokohama, JP;
Hiroshi Ito, Yokohama, JP;
Atsushi Nakayama, Kawasaki, JP;
Osamu Wada, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a storage element which is programmed with information by breaking an insulating film by application of electrical stress to the storage element, a control switch which controls the application of electrical stress to the storage element, and a control circuit which controls conduction/nonconduction of the control switch. The device further includes a power supply circuit including a voltage generation circuit which generates a first voltage to cause the electrical stress in program operation, a sensing circuit which senses that the insulating film is broken down, and a counter circuit which controls the control circuit to interrupt the application of electrical stress to the storage element when a given period of time elapses after the sensing circuit senses that the insulating film is broken down.