The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7388291 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 17, 2008

Filed:

Feb. 24, 2005
Applicants:

Tetsuya Kurokawa, Kawasaki, JP;

Koji Arita, Kawasaki, JP;

Inventors:

Tetsuya Kurokawa, Kawasaki, JP;

Koji Arita, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device having interconnects is reduced in leakage current between the interconnects and improved in the TDDB characteristic. It includes an insulating interlayer, and interconnectsfilled in grooves formed in the insulating interlayer, including a copper layermainly composed of copper, having the thickness smaller than the depth of the grooves, and a low-expansion metal layer, which is a metal layer having a heat expansion coefficient smaller than that of the copper layer, formed on the copper layer.


Find Patent Forward Citations

Kurokawa, Tetsuya. (2008). Semiconductor device and method of fabricating the same (U.S. Patent No. 7388291). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7388291

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