The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
May. 19, 2005
Hirofumi Sato, Kyoto, JP;
Kazunari Sato, Kyoto, JP;
Koichi Fujii, Kyoto, JP;
Angel Co., Ltd., Kyoto-Shi, Kyoto, JP;
Abstract
A diode such as a cell string bypass diode or a reverse-current preventive diode exhibiting excellent heat dissipativity and preferably sealed integrally in a solar cell module. An N terminal () consists thickness part of 0.8 mm or above, i.e. an N substrate part (), one thin part, i.e. an N thin part (), and a P connecting wire receiving part (). In a state where a diode chip () is connected, the thicknesses of the entire lead terminals are substantially the same, the total value of the plane area of the N substrate part and the P substrate part is 200 (mm)or above, and the diode with a lead terminal is sealed together with the solar cell between the front surface material and the rear surface material for sealing the solar cell.