The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Jan. 15, 2003
Takayuki Watanabe, Fuji, JP;
Yoshihiko Shibata, Fuji, JP;
Tsuyoshi Ujihara, Fuji, JP;
Takashi Yoshida, Fuji, JP;
Akihiko Oyama, Numazu, JP;
Takayuki Watanabe, Fuji, JP;
Yoshihiko Shibata, Fuji, JP;
Tsuyoshi Ujihara, Fuji, JP;
Takashi Yoshida, Fuji, JP;
Akihiko Oyama, Numazu, JP;
Asahi Kasei Electronics Co., Ltd., Tokyo, JP;
Abstract
Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least two of five elements of Al, Ga, In, As and P, and an active layer composed of InGaAsSb(0.8≦x≦1.0, 0.8≦y≦1.0), which are stacked. Compared with the active layer, the first and second compound semiconductor layers each have a wider band gap, and a resistance value five times or more greater. The lattice constant differences between the active layer and the first and second compound semiconductor layers are each designed in a range of 0.0-1.2%, and the thickness of the active layer is designed in a range of 30-100 nm.