Semiconductor device having ldd-type source/drain regions and fabrication method thereof

Abstract

A semiconductor device having LDD-type source/drain regions and a method of fabricating the same are provided. The semiconductor device includes at least a pair of gate patterns disposed on a semiconductor substrate and LDD-type source/drain regions disposed at both sides of the gate patterns. The substrate having the gate patterns and the LDD-type source/drain regions is covered with a conformal etch stop layer. The etch stop layer is covered with an interlayer insulating layer. The LDD-type source/drain region is exposed by a contact hole that penetrates the interlayer insulating layer and the etch stop layer. The method of forming the LDD-type source/drain regions and the etch stop layer includes forming low-concentration source/drain regions at both sides of the gate patterns and forming the conformal etch stop layer on the substrate having the low-concentration source/drain regions. Gate spacers are then formed on the sidewalls of the gate patterns. Using the gate patterns and the gate spacers as implantation masks, impurity ions are implanted into the semiconductor substrate to form high-concentration source/drain regions. The spacers are then selectively removed. An interlayer insulating layer is formed on the substrate where the spacers are removed.