The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Mar. 29, 2006
Applicants:
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Marcia Moore, Santa Barbara, CA (US);
Inventors:
Yifeng Wu, Goleta, CA (US);
Primit Parikh, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Marcia Moore, Santa Barbara, CA (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
Abstract
Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power density of at least 5 W/mm when operated at 10 GHz at drain biases from 28 V to 48 V are also provided.