The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Jul. 24, 2007
Atsunori Nishiura, Tokyo, JP;
Takuji Imamura, Tokyo, JP;
Atsunori Nishiura, Tokyo, JP;
Takuji Imamura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A thin film transistor substrate includes a first conductive layer formed on a substrate, an anti-diffusion layer deposited on the first conductive layer, a semiconductor layer formed on the anti-diffusion layer, a gate insulating layer deposited on the semiconductor layer, a second conductive layer formed on the gate insulating layer, an interlayer insulating layer deposited on the second conductive layer, and a third conductive layer formed on the interlayer insulating layer, in a first contact hole penetrating through the interlayer insulating layer and the gate insulating layer to reach the semiconductor layer, and in a second contact hole penetrating through the interlayer insulating layer, the gate insulating layer and the anti-diffusion layer to reach the first conductive layer. The third conductive layer includes a pixel electrode formed in island shape on the interlayer insulating layer.