The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Oct. 12, 2004
Woong Kwon Kim, Gunpo-shi, KR;
Young Gyoung Chang, Uiwang-shi, KR;
Heung Lyul Cho, Suwon-shi, KR;
LG. Philips LCD. Co., Ltd, Seoul, KR;
Abstract
A three-mask horizontal electric field applying type thin film transistor substrate is disclosed in which three conductive layers are formed. The first conductive layer contains a parallel gate and common lines and gate and common electrodes. A semiconductor pattern is formed on a gate insulating film coating the structure. The second conductive layer forms a data line, a source electrode connected to the data line and a drain electrode opposed to the source electrode on the semiconductor pattern. A protective film is coated thereon. The protective film and the gate insulating film are patterned to expose a portion of the drain electrode and a pixel hole. A third conductive layer is patterned to provide a pixel electrode connected to the exposed drain electrode and making an interface with the protective film within the pixel hole.