The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Apr. 10, 2003
William P. Mulligan, San Jose, CA (US);
Michael J. Cudzinovic, Sunnyvale, CA (US);
Thomas Pass, San Jose, CA (US);
David Smith, San Jose, CA (US);
Richard M. Swanson, Los Altos, CA (US);
William P. Mulligan, San Jose, CA (US);
Michael J. Cudzinovic, Sunnyvale, CA (US);
Thomas Pass, San Jose, CA (US);
David Smith, San Jose, CA (US);
Richard M. Swanson, Los Altos, CA (US);
Sunpower Corporation, San Jose, CA (US);
Abstract
In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.