The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2008

Filed:

Jul. 27, 2006
Applicants:

Masaru Yano, Tokyo, JP;

Hideki Arakawa, Kanagawa, JP;

Mototada Sakashita, Tokyo, JP;

Inventors:

Masaru Yano, Tokyo, JP;

Hideki Arakawa, Kanagawa, JP;

Mototada Sakashita, Tokyo, JP;

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a memory cell array that has a plurality of non-volatile memory cells each having a first bit and a second bit in different regions in a charge storing layer; an SRAM array (first memory unit) that stores data to be written into the memory cell array; a WR sense amplifier block (second memory unit) that stores first divided data to be written into the first bit and second divided data to be written into the second bit, the first divided data being formed by dividing the data into predetermined units, the second divided data being formed by dividing the data into predetermined units; and a control circuit that writes the second divided data into the first bit of the memory cells of the memory cell array (step S) after writing the first divided data into the second bit of the memory cells of the memory cell array (step S).


Find Patent Forward Citations

Loading…