Nonvolatile memory cell and methods for operating a nonvolatile memory cell

Abstract

A nonvolatile memory cell () can be integrated in space-saving fashion into a semiconductor circuit () intended for volatile storage with the aid of volatile memory cells (). The memory cell () has a programmable component () having an electrical resistance that can be altered by reprogramming, and also first () and second switching elements (), which switch a first current path (J) or a second current path (J) in conducting fashion upon activation of optionally a first () or a second word line (). At least one of the two current paths leads via the programmable component (). Potentials of two bit lines () to which the memory cell () according to the invention is connected can be altered as a result of the first or the second current path (J, J) being activated temporarily. The memory cell () permanently stores an item of digital information and can be driven by word lines () and bit lines () such as are conventionally used in volatile semiconductor memories (). The invention opens up the possibility of integrating volatile and nonvolatile memory cells into a common memory cell array.