The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2008

Filed:

Jun. 05, 2002
Applicants:

Hideki Iwaki, Osaka, JP;

Tetsuyoshi Ogura, Osaka, JP;

Yutaka Taguchi, Osaka, JP;

Inventors:

Hideki Iwaki, Osaka, JP;

Tetsuyoshi Ogura, Osaka, JP;

Yutaka Taguchi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 23/495 (2006.01); H01G 4/228 (2006.01); H05K 1/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

At least four terminal electrodes are provided on a surface of multi-layer substrate main body. An electric functional layer is selectively provided at an internal area of said multi-layer substrate placed at a downward position of all terminal electrodes in a substrate thickness direction. A semiconductor device is flip-chip-bonded to the terminal electrodes. Thus, the semiconductor device is electrically connected to the electric functional layer at a short distance. As a result, a reduction in parasitic inductance and an improvement in high frequency characteristic can be accomplished. Generation of height variations between the terminal electrodes can be prevented, and the semiconductor device is stably flip-chip-bonded to the multi-layer substrate.


Find Patent Forward Citations

Loading…