The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Mar. 09, 2005
Deok-hyung Lee, Gyeonggi-do, KR;
In-deog Bae, Seoul, KR;
Byeong-chan Lee, Gyeonggi-do, KR;
Jong-wook Lee, Gyeonggi-do, KR;
Deok-Hyung Lee, Gyeonggi-do, KR;
In-Deog Bae, Seoul, KR;
Byeong-Chan Lee, Gyeonggi-do, KR;
Jong-Wook Lee, Gyeonggi-do, KR;
Abstract
Fin FET semiconductor devices are provided which include a substrate, an active pattern that protrudes vertically from the substrate and that extends laterally in a first direction, a device isolation layer which has a top surface that is lower than a top surface of the active pattern, a gate structure on the substrate that extends laterally in a second direction to cover a portion of the active pattern and a conductive layer that is on at least portions of side surfaces of the active pattern that are adjacent a side portion of the gate structure. The conductive layer may comprise a semiconductor layer, and the semiconductor layer may be in electrical contact with a contact pad. In other embodiments, the conductive layer may comprise a contact pad.