The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Feb. 08, 2005
Geoff W. Taylor, Storrs-Mansfield, CT (US);
Geoff W. Taylor, Storrs-Mansfield, CT (US);
The University of Connecticut, Farmington, CT (US);
Opel, Inc., Shelton, CT (US);
Abstract
A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate () with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transistor structures are obtained by adding planar doping to the Pseudomorphic High Electron Mobility Transistor (PHEMT) structure. For one transistor, two sheets of planar doping of the same polarity separated by a lightly doped layer are added which are opposite to the modulation doping of the PHEMT. The combination is separated from the PHEMT modulation doping by undoped material. The charge sheets are thin and highly doped. The top charge sheet () achieves low gate contact resistance and the bottom charge sheet () defines the capacitance of the field-effect transistor (FET) with respect to the modulation doping layer of the PHEMT. For the other transistor, only one additional sheet is added.