The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Sep. 15, 2003
Cyril Cabral, Jr., Ossining, NY (US);
Roy A. Carruthers, Stormville, NY (US);
Jia Chen, Ossining, NY (US);
Christophe Detavernier, Ossining, NY (US);
James M. Harper, Durham, NH (US);
Christian Lavoie, Ossining, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Roy A. Carruthers, Stormville, NY (US);
Jia Chen, Ossining, NY (US);
Christophe Detavernier, Ossining, NY (US);
James M. Harper, Durham, NH (US);
Christian Lavoie, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.