The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Dec. 22, 2005
Seok-su Kim, Gyeonggi-do, KR;
Seok-Su Kim, Gyeonggi-do, KR;
Abstract
A method of forming a metal line in a semiconductor device includes: forming a lower insulation layer for insulation from the lower substrate; forming a first metal line at a certain region on the lower insulation layer; sequentially forming a first oxide layer, an FSG (Fluorine-doped Silicate Glass) layer, and a second oxide layer on the lower insulation layer and the first metal line; removing the first oxide layer, the FSG layer, and the second oxide layer so as to expose the first metal line; forming an upper insulation layer on the lower insulation layer and the first metal line; forming a contact hole by etching the upper insulation layer to a degree that the first metal line is exposed; and forming a second metal line by depositing a metal material in the contact hole.