The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Apr. 30, 2004
Taketomi Asami, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Noriyoshi Suzuki, Kanagawa, JP;
Hideto Ohnuma, Kanagawa, JP;
Masato Yonezawa, Kanagawa, JP;
Taketomi Asami, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Noriyoshi Suzuki, Kanagawa, JP;
Hideto Ohnuma, Kanagawa, JP;
Masato Yonezawa, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken, JP;
Abstract
A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×10/cmto 1×10/cmand containing fluorine at a concentration of 1×10/cmto 1×10/cm.