Method of forming exposure mask pattern, exposure mask pattern, and method of producing semiconductor device

Abstract

A method of forming an exposure mask pattern providing edge division points P at edges of a design pattern () by predetermined intervals and correcting edge positions for each divided edge portion, wherein, for the design pattern (), rectangular patterns () and () are formed having pairs of facing long sides and facing short sides in the design pattern (). The rectangular patterns () and () are formed at portions having widths Wand Wof the long sides in the design pattern () within a predetermined interval W, so that W≦Wand W≦W. Next, at each of the rectangular patterns () and (), new edge division points P (P) are given along each of the facing long sides at predetermined intervals t from start points Psharing a short side. Due to this, the exposure mask pattern used for lithography can be simplified and the precision of formation of a transfer pattern can be improved.