The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Sep. 08, 2005
Applicants:
Katsuhiko Kemmochi, Camas, WA (US);
Robert Mosier, Camas, WA (US);
Yasuo Ohama, Fukui, JP;
Inventors:
Assignee:
Heraeus Shin-Etsu America, Inc., Camas, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the crucible has little influence on melt level. The present crucible is especially suited for slow silicon ingot pulling with reduced crystalline defects. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica.