The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2008

Filed:

Feb. 16, 2006
Applicants:

Shigeki Matsumoto, Himeji, JP;

Shigenori Nozawa, Himeji, JP;

Yoshimasa Ogawa, Himeji, JP;

Inventors:

Shigeki Matsumoto, Himeji, JP;

Shigenori Nozawa, Himeji, JP;

Yoshimasa Ogawa, Himeji, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/55 (2006.01); G01N 21/47 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device for measuring the reflection factor by irradiating a measurement area of a microchip with light, and in which a light receiving part is made to receive light reflected from the measurement area for determination of the reflection factor of the measurement area. The light receiving part is located in an angular region θ, satisfying the relationship (½)α≦θ≦sin(1/n) and being located between angles θand θ, θand θ(in°) being angles which the reflection light forms with respect to a normal on the edge of the irradiated surface of the area to be measured in a virtual plane which contains the emission center of the light emitting part and which is perpendicular to the microchip, wherein θis ½ α and θcorresponds to sin(1/n), where α (°) is the scattering angle of the light radiated by the light emitting part which is located directly above the area to be measured, and wherein n is the index of refraction of the transparent component.


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