The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Feb. 08, 2006
Neal W. Hollenbeck, Palatine, IL (US);
Kenneth R. Haddad, Arlington Heights, IL (US);
William J. Roeckner, Carpentersville, IL (US);
Neal W. Hollenbeck, Palatine, IL (US);
Kenneth R. Haddad, Arlington Heights, IL (US);
William J. Roeckner, Carpentersville, IL (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An edge seal structure and fabrication method are described. The edge seal structure includes a high impedance substrate containing a base material and a grounded floating edge seal that is on the substrate but is isolated from the base material. The edge seal contacts a first doped well in the substrate that has the same conductivity type as and is more heavily doped than the base material. The first doped well is in a second doped well that has a different conductivity type than the first doped well. The first and second doped wells and the base material form back-to-back series connected diodes. The wells are effectively connected to power and ground such that the diodes are reverse-biased. The edge seal is formed by a stack of conductive layers, at least some of which are surrounded by a stack of insulating layers.