The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2008

Filed:

Jun. 01, 2005
Applicant:

Vassili Kitch, San Ramon, CA (US);

Inventor:

Vassili Kitch, San Ramon, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

First material () is situated on the surface of a substructure (and) and in an opening (), such as a Wench, that extends partway through the substructure. Second material () is situated on the first material in the opening. A physical sputter etch is performed on the structure while it is in a sputter etch module () to remove the parts of the first material overlying the substructure's surface and situated above the opening and to remove part of the second material overlying the first material in the opening so that remaining parts of the first and second materials are situated in the opening. The so-modified structure is transferred from the sputter etch module under a substantial vacuum, normally via a transfer module (), to a deposition module (, or) where a layer of third material is deposited over the substructure's surface and over the parts of the first and second materials in the opening.


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