The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Jan. 25, 2005
Applicant:
Nobuyuki Nishikawa, Kawasaki, JP;
Inventor:
Nobuyuki Nishikawa, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8239 (2006.01);
U.S. Cl.
CPC ...
Abstract
The semiconductor memory device comprises a glue layer defining a cylinder shell, a bottom electrode made of a material of the platinum group and covering the inner face and the outer face of the cylinder shell, a dielectric layer formed over the bottom electrode, and a top electrode positioned over the dielectric layer. The bottom electrode, the dielectric layer, and the top electrode comprise a cell capacitor.
Nishikawa, Nobuyuki. (2008). Method for fabricating a semiconductor memory device that includes silicidizing a portion of a platinum group layer to form a silicide region and selectively removing the silicide region to define a bottom electrode of a capacitor (U.S. Patent No. 7381614). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7381614
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile