The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Feb. 06, 2006
Dafine Ravelosona, Villiers le Bacle, FR;
Bruce David Terris, Sunnyvale, CA (US);
Dafine Ravelosona, Villiers le Bacle, FR;
Bruce David Terris, Sunnyvale, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer in between the first and the second ferromagnetic layers. The first and the second ferromagnetic layers exhibit perpendicular magnetic anisotropy and have magnetic moments which are set in accordance with one of a plurality of magnetic orientation sets of the ferromagnetic structure, and the ferromagnetic structure exhibits one of a plurality of predetermined extraordinary Hall resistances Rin accordance with the magnetic orientation set. The extraordinary Hall resistance is exhibited between first and second ends of the ferromagnetic structure across a path which intersects a bias current path between third and fourth ends of the ferromagnetic structure.