The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Dec. 26, 2002
Zoltan Zansky, San Carlos, CA (US);
Zoltan Zansky, San Carlos, CA (US);
Network Appliance, Inc, Sunnyvale, CA (US);
Abstract
The present invention is a method and system for providing improved isolation for power supplies while minimizing power dissipation. A body diode of a MOSFET may be utilized with a comparator circuit. The comparator circuit may detect current flow across the MOSFET and may turn the MOSFET on. This may shunt the diode with a low drain to source resistance limiting power dissipation across the diode to an amount of the drain to source current squared (Ids) times the drain to source resistance of the MOSFET when on (RDSon). Use of the comparator circuitry may reduce the time delay associated with turning the MOSFET off to prevent a high reverse inrush current within a power supply.