The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Oct. 27, 2004
Tsutomu Ichihara, Hirakata, JP;
Chousei Hamada, Kadoma, JP;
Koshi Akedo, Koriyama, JP;
Hiroaki Kitamura, Moriguchi, JP;
Hiroshi Fukshima, Kadoma, JP;
Takuya Komoda, Sanda, JP;
Takashi Hatai, Neyagawa, JP;
Tsutomu Ichihara, Hirakata, JP;
Chousei Hamada, Kadoma, JP;
Koshi Akedo, Koriyama, JP;
Hiroaki Kitamura, Moriguchi, JP;
Hiroshi Fukshima, Kadoma, JP;
Takuya Komoda, Sanda, JP;
Takashi Hatai, Neyagawa, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of padsfor energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.