The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Apr. 09, 2004
Yu-chong Tai, Pasadena, CA (US);
Matthieu Liger, Pasadena, CA (US);
Ming C. Wu, Orinda, CA (US);
Jui-che Tsai, Los Angeles, CA (US);
Yu-Chong Tai, Pasadena, CA (US);
Matthieu Liger, Pasadena, CA (US);
Ming C. Wu, Orinda, CA (US);
Jui-che Tsai, Los Angeles, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A method for manufacturing a sensing device, such as a bolometer device or other devices. The method includes providing a substrate, e.g., silicon wafer. The method includes forming a first reflection layer overlying the substrate and forming a first electrode layer overlying the substrate. The method includes forming a sacrificial layer overlying a portion of the first reflection layer and a portion of the first electrode layer. The sacrificial layer is patterned using photolithography techniques. The patterned sacrificial layer corresponds to a cavity region. The method also forms a second electrode layer overlying the sacrificial layer and forms an elastic layer overlying the patterned sacrificial layer. The elastic layer encloses the cavity region corresponding to the patterned sacrificial layer. The method releases the sacrificial layer to form an opening in the cavity region.