The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Mar. 16, 2002
Hongmei Zhang, San Jose, CA (US);
Mukundan Narasimhan, San Jose, CA (US);
Ravi B. Mullapudi, San Jose, CA (US);
Richard E. Demaray, Portola Valley, CA (US);
Hongmei Zhang, San Jose, CA (US);
Mukundan Narasimhan, San Jose, CA (US);
Ravi B. Mullapudi, San Jose, CA (US);
Richard E. Demaray, Portola Valley, CA (US);
SpringWorks, LLC, Minnetonka, MN (US);
Abstract
A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated processes performed on a reactor according to the present inention.