The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Mar. 22, 2006
Ngoc V. Le, Gilbert, AZ (US);
Jeffrey H. Baker, Chandler, AZ (US);
Diana J. Convey, Laveen, AZ (US);
Paige M. Holm, Phoenix, AZ (US);
Steven M. Smith, Gilbert, AZ (US);
Ngoc V. Le, Gilbert, AZ (US);
Jeffrey H. Baker, Chandler, AZ (US);
Diana J. Convey, Laveen, AZ (US);
Paige M. Holm, Phoenix, AZ (US);
Steven M. Smith, Gilbert, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (). The method comprises forming a first mirror () over the substrate (). A plurality of etalon material layers () are formed over the mirror (), and a plurality of etch stop layers () are formed, one each between adjacent etalon material layers (). A photoresist is patterned to create an opening () over the top etalon material layer () and an etch () is performed down to the top etch stop layer (). An oxygen plasma () may be applied to convert the etch stop layer () within the opening () to silicon dioxide (). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (). A second mirror () is then formed on each of the levels ().