The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
May. 23, 2006
Saichirou Kaneko, Kyoto, JP;
Masakatsu Hoshi, Yokohama, JP;
Yoshinori Murakami, Tokyo, JP;
Tetsuya Hayashi, Yokosuka, JP;
Hideaki Tanaka, Yokosuka, JP;
Saichirou Kaneko, Kyoto, JP;
Masakatsu Hoshi, Yokohama, JP;
Yoshinori Murakami, Tokyo, JP;
Tetsuya Hayashi, Yokosuka, JP;
Hideaki Tanaka, Yokosuka, JP;
Nissan Motor Co., Ltd., Kanagawa-Ken, JP;
Abstract
A high voltage semiconductor device having a high current gain hFE is formed with a collector region () of a first conduction type, an emitter region () of the first conduction type, and a base region () of a second conduction type opposite to the first conduction type located between the collector region and the emitter region. The free carrier density of the base region () where no depletion layer is formed is smaller than the space charge density of a depletion layer formed in the base region ().