The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Nov. 28, 2005
BO Youn Kim, Kyoungki-do, KR;
Bo Youn Kim, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
To improve the refresh characteristics of a semiconductor device, a gate oxide layer comprising a first oxide layer and a second oxide layer are formed on the substrate. A portion of the second oxide layer is isotropically etched using a photoresist layer pattern. A gate is formed by sequentially forming a gate conductive layer and a hard mask layer on the second oxide layer, and sequentially etching the hard mask layer, the gate conductive layer, the second oxide layer and the first oxide layer. Due to isotropic etching of the second oxide layer, the portion of the gate oxide layer corresponding to the center portion of the channel gate is thinner than the other portion of the gate oxide layer correspond to an edge of the channel gate.