The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Dec. 23, 2004
Hyeoung-won Seo, Yongin-Si, KR;
Dong-hyun Kim, Suwon-Si, KR;
Du-heon Song, Yongin-Si, KR;
Sang-hyun Lee, Seoul, KR;
Hyeoung-Won Seo, Yongin-Si, KR;
Dong-Hyun Kim, Suwon-Si, KR;
Du-Heon Song, Yongin-Si, KR;
Sang-Hyun Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A MOS (metal oxide semiconductor) transistor with a trench-type gate is fabricated with a channel stopping region for forming an asymmetric channel region for reducing short channel effects. For example in fabricating an N-channel MOS transistor, a gate structure is formed within a trench that is within a P-well. A channel stopping region with a P-type dopant is formed to a first side of the trench to completely contain an N-type source junction therein. An N-type drain junction is formed within a LDD region to a second side of the trench, thus forming the asymmetric channel region.