The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Nov. 07, 2005
James R. Wasson, Tempe, AZ (US);
Pawitter Mangat, Gilbert, AZ (US);
James R. Wasson, Tempe, AZ (US);
Pawitter Mangat, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A patterned reflective semiconductor mask uses a multiple layer ARC overlying an absorber stack that overlies a reflective substrate. The absorber stack has more than one layer and an upper layer of the absorber stack has a predetermined metal. The multiple layer ARC overlying the upper layer of the absorber stack has layers of nitrogen, oxygen and nitrogen combined with the predetermined metal of the upper layer of the absorber stack. The oxygen layer in the ARC has less metallic properties than the nitrogen layers therein. In one form, an overlying dielectric layer is positioned on the multiple layer ARC to increase light interference. The ARC provides wide bandwidth inspection contrast for extreme ultra-violet (EUV) reticles.