The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Apr. 18, 2003
Shun-yong Zinn, Greenbelt, MD (US);
Shun-Yong Zinn, Greenbelt, MD (US);
Samsung Electronics Co., Ltd., Suwon, Kyungki-Do, KR;
Abstract
A simulation method designs an aperture to obtain optimum resolution and DOF in consideration of the layout of a circuit pattern of a photomask, and a recording medium in which the simulation method is recorded. The simulation method for designing an aperture in an exposure apparatus including a light source, an optical lens group, a photomask, an aperture, receives the layout information of the photomask. The aperture is divided into a plurality of pixels. The pixels of the aperture are flipped, a photolithography simulation is executed to produce a simulated photoresist pattern, and the shape of the aperture that provides an optimum resolution for the simulated photoresist pattern is searched for. Beneficially, a system is provided to execute the method. Also, beneficially, the simulation method may be stored on a storage medium.