The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Sep. 11, 2003
James R. Eaton, Jr., Palo Alto, CA (US);
Frederick A. Perner, Palo Alto, CA (US);
Lung T. Tran, Saratoga, CA (US);
Kenneth J. Eldredge, Boise, ID (US);
James R. Eaton, Jr., Palo Alto, CA (US);
Frederick A. Perner, Palo Alto, CA (US);
Lung T. Tran, Saratoga, CA (US);
Kenneth J. Eldredge, Boise, ID (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for making magnetic random access memories (MRAM) isolates each and every memory cell in an MRAM array during operation until selected. Some embodiments use series connected diodes for such electrical isolation. Only a selected one of the memory cells will then conduct current between respective ones of the bit and word lines. A better, more uniform distribution of read and data-write data access currents results to all the memory cells. In another embodiment, this improvement is used to increase the number of rows and columns to support a larger data array. In a further embodiment, such improvement is used to increase operating margins and reduce necessary data-write voltages and currents.