The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Mar. 07, 2007
Applicants:
Shuji Nakamura, Anan, JP;
Takao Yamada, Anan, JP;
Masayuki Senoh, Anan, JP;
Motokazu Yamada, Anan, JP;
Kanji Bando, Anan, JP;
Inventors:
Shuji Nakamura, Anan, JP;
Takao Yamada, Anan, JP;
Masayuki Senoh, Anan, JP;
Motokazu Yamada, Anan, JP;
Kanji Bando, Anan, JP;
Assignee:
Nichia Corporation, Tokushima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.