The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2008

Filed:

Jul. 11, 2005
Applicants:

Hirokazu Asahara, Kyoto, JP;

Mitsuhiko Sakai, Kyoto, JP;

Masayuki Sonobe, Kyoto, JP;

Toshio Nishida, Kyoto, JP;

Inventors:

Hirokazu Asahara, Kyoto, JP;

Mitsuhiko Sakai, Kyoto, JP;

Masayuki Sonobe, Kyoto, JP;

Toshio Nishida, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.


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