The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Jun. 13, 2001
Johannes Baur, Deuerling, DE;
Georg Brüderl, Burglengenfeld, DE;
Berthold Hahn, Hernau, DE;
Volker Härle, Laaber, DE;
Uwe Strauss, Bad Abbach, DE;
Johannes Baur, Deuerling, DE;
Georg Brüderl, Burglengenfeld, DE;
Berthold Hahn, Hernau, DE;
Volker Härle, Laaber, DE;
Uwe Strauss, Bad Abbach, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
A light-emitting diode chip (), in which over a substrate (), a series of epitaxial layers () with a radiation-emitting active structure () based on InGaN is disposed. Between the substrate () and the active structure (), a buffer layer () is provided. The material or materials of the buffer layer () are selected such that their epitaxial surface () for the epitaxy of the active structure () is unstressed or slightly stressed at their epitaxial temperature. The active structure () has In-rich zones (), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure (). A preferred method for producing the chip is disclosed.