The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Feb. 01, 2006
Giuseppe LA Rosa, Fishkill, NY (US);
Kevin W. Kolvenbach, Walden, NY (US);
John Greg Massey, Jericho, VT (US);
Ping-chuan Wang, Hopewell Junction, NY (US);
Kai Xiu, Chappaqua, NY (US);
Giuseppe La Rosa, Fishkill, NY (US);
Kevin W. Kolvenbach, Walden, NY (US);
John Greg Massey, Jericho, VT (US);
Ping-Chuan Wang, Hopewell Junction, NY (US);
Kai Xiu, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure is provided which includes at least one semiconductor device and a diffusion heater in a continuous active semiconductor area of a substrate. One or more semiconductor devices are provided in a first region of the active semiconductor area and a diffusion heater is disposed adjacent thereto which consists essentially of a semiconductor material included in the active semiconductor area. Conductive isolation between the first region and the diffusion heater is achieved through use of a separating gate. The separating gate overlies an intermediate region of the active semiconductor area between the first region and the diffusion heater and the separating gate is biasable to conductively isolate the first region from the diffusion heater.