The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Dec. 02, 2005
Applicant:
Kwang Chul Joo, Kyeongki-do, KR;
Inventor:
Kwang Chul Joo, Kyeongki-do, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing flash memory devices includes depositing a nitride film over a semiconductor substrate and forming an oxide film below the nitride film using an oxidization process involving an anneal process. A tunnel oxide film or an ONO2 oxide film having a thin thickness and a good film quality is formed and the operating performance of memory cells is improved.
Joo, Kwang. (2008). Method of manufacturing flash memory device (U.S. Patent No. 7374997). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7374997
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile