The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Mar. 17, 2006
Brent A. Anderson, Jericho, VT (US);
Louis D. Lanzerotti, Burlington, VT (US);
Edward J. Nowak, Essex Junction, VT (US);
Brent A. Anderson, Jericho, VT (US);
Louis D. Lanzerotti, Burlington, VT (US);
Edward J. Nowak, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field effect transistor and method of fabricating the field effect transistor. The field effect transistor, including: a gate electrode formed on a top surface of a gate dielectric layer, the gate dielectric layer on a top surface of a single-crystal silicon channel region, the single-crystal silicon channel region on a top surface of a Ge including layer, the Ge including layer on a top surface of a single-crystal silicon substrate, the Ge including layer between a first dielectric layer and a second dielectric layer on the top surface of the single-crystal silicon substrate.